Photoluminescence properties of praseodymium ions implanted into submicron-regions in gallium nitride

28 March 2019

Photoluminescence properties of praseodymium ions implanted into submicron-regions in gallium nitride;
Shin-ichiro Sato, Manato Deki, Tohru Nakamura, Tomoaki Nishimura, Daniel Stavrevski, Andrew D. Greentree, Brant C. Gibson and Takeshi Ohshima;
Japanese Journal of Applied Physics;
DOI/10.7567/1347-4065/ab142b.

https://iopscience.iop.org/article/10.7567/1347-4065/ab142b