Electronic transport in Si:P δ-doped wires

Daniel Drumm Low Res Edit 012211 December 2015:

‘Electronic transport in Si:P δ-doped wires’ is the latest paper by CNBP Research Fellow Dr Daniel Drumm, published in the journal Physical Review B.

Abstract – Despite the importance of Si:P δ-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green’s function model for electronic transport in a δ-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of δ-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of δ-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a δ-doped wire, which we find to be at least 4.6 nm.

Further paper information is available online.